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Substrate Rotation Chemical Bath Deposition of Cadmium Sulfide Buffer Layers for Thin Film Solar Cell Application

机译:用于薄膜太阳能电池的硫化镉缓冲层的衬底旋转化学浴沉积

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A method for deposition of cadmium sulfide (CdS) buffer layer thin films on fluorine-doped tin oxide (FTO) glass, by chemical bath deposition (CBD), has been modified. For achieving relatively uniform and pin-hole-free CdS films, substrate rotation, concentration of CdS salts, and deposition time were optimized. The deposited films were characterized by UV-Vis-NIR spectroscopy, scanning electron microscopy (SEM), X-ray diffraction (XRD), and atomic force microscopy (AFM). Band gap of~2.4 eV was measured by UV-Vis-NIR spectroscopy, CdS phase was confirmed by XRD, and film uniformity and roughness (~15–20 nm) were measured by SEM and AFM, respectively.
机译:修改了通过化学浴沉积(CBD)在掺杂氟的氧化锡(FTO)玻璃上沉积硫化镉(CdS)缓冲层薄膜的方法。为了获得相对均匀且无针孔的CdS膜,对基板旋转,CdS盐浓度和沉积时间进行了优化。通过UV-Vis-NIR光谱,扫描电子显微镜(SEM),X射线衍射(XRD)和原子力显微镜(AFM)表征沉积的膜。用UV-Vis-NIR光谱仪测定了〜2.4 eV的带隙,通过XRD证实了CdS相,并用SEM和AFM分别测定了膜的均匀性和粗糙度(〜15-20 nm)。

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