首页> 外国专利> CORRECTION METHOD OF FLUORESCENT SIGNAL TO BE MEASURED BY SPFS (SURFACE PLASMON EXCITATION ENHANCED FLUORESCENCE SPECTROMETRY), ASSAY METHOD USING THE SAME, STRUCTURE TO BE USED FOR THE METHODS AND SURFACE PLASMON RESONANCE SENSOR

CORRECTION METHOD OF FLUORESCENT SIGNAL TO BE MEASURED BY SPFS (SURFACE PLASMON EXCITATION ENHANCED FLUORESCENCE SPECTROMETRY), ASSAY METHOD USING THE SAME, STRUCTURE TO BE USED FOR THE METHODS AND SURFACE PLASMON RESONANCE SENSOR

机译:用SPFS(表面等离子体激元增强荧光光谱法)测量荧光信号的校正方法,使用相同方法进行评估的方法,用于该方法的结构以及表面等离子体共振传感器

摘要

PROBLEM TO BE SOLVED: To provide a correction method of measurement data which eliminates an influence of variation of electric field enhancement derived from variation of thickness of a metal thin film constituting an SPFS sensor substrate, and thus, enhances measurement accuracy and reliability of SPFS, etc., without introducing complicated configurations to the SPFS sensor substrate and an assay method using the same.;SOLUTION: The present invention provides the correction method of a fluorescent signal for calculating electric field enhancement ratio R from signals (Sp) and (Sq) to be measured in an area (P) where a fluorescent molecule layer is formed without interposing the metal thin film and in an area (Q) where the fluorescent molecule layer is formed via the metal thin film for the fluorescent signal (Sm), and converting the fluorescent signal into the corrected signal (Sm1) using the electric field enhancement ratio R, and the assay method using the method.;COPYRIGHT: (C)2012,JPO&INPIT
机译:解决的问题:为了提供一种测量数据的校正方法,该方法消除了由于构成SPFS传感器基板的金属薄膜的厚度变化而引起的电场增强变化的影响,从而提高了SPFS的测量精度和可靠性,发明内容本发明提供了一种荧光信号的校正方法,该校正方法用于根据信号(Sp)和(Sq)计算电场增强比R。在不插入金属薄膜的情况下在形成荧光分子层的区域(P)中以及通过金属薄膜形成的荧光信号(Sm)的金属薄膜形成在荧光分子层的区域(Q)中进行测量;以及使用电场增强比R将荧光信号转换为校正信号(Sm1),以及使用该方法的测定方法.COPYRIGHT:(C)201 2,JPO&INPIT

著录项

  • 公开/公告号JP2012042233A

    专利类型

  • 公开/公告日2012-03-01

    原文格式PDF

  • 申请/专利权人 KONICA MINOLTA HOLDINGS INC;

    申请/专利号JP20100181364

  • 发明设计人 KAYA TAKATOSHI;

    申请日2010-08-13

  • 分类号G01N33/543;G01N33/48;

  • 国家 JP

  • 入库时间 2022-08-21 17:40:34

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