首页> 外国专利> HONEYCOMB STRUCTURE, Si-SiC BASED COMPOSITE MATERIAL, METHOD FOR MANUFACTURING HONEYCOMB STRUCTURE, AND METHOD FOR MANUFACTURING Si-SiC BASED COMPOSITE MATERIAL

HONEYCOMB STRUCTURE, Si-SiC BASED COMPOSITE MATERIAL, METHOD FOR MANUFACTURING HONEYCOMB STRUCTURE, AND METHOD FOR MANUFACTURING Si-SiC BASED COMPOSITE MATERIAL

机译:蜂窝状结构,Si-SiC基复合材料,制造蜂窝状结构的方法以及Si-SiC基复合材料的制造方法

摘要

PROBLEM TO BE SOLVED: To more easily form electrode portions and further to reduce volume resistivity.;SOLUTION: A honeycomb structure 20 includes a partition portion 22 constituting a plurality of cells 23 serving as flow paths of a fluid. This honeycomb structure 20 further includes: electrode portions 32 which are disposed as parts of the partition portion 22 and which have an SiC phase, an oxide phase containing an Si oxide, an Al oxide, and an alkaline-earth metal oxide, and a metal phase containing metal Si and metal Al, where the proportion of metal Al relative to the total amount of metal Si and metal Al is 0.001-20 mol%; and a heat generation portion 34 which is a part of the partition portion 22 and which has a volume resistivity higher than that of the electrode portion 32. This honeycomb structure is obtained by forming an impregnation base material containing metal Si and metal Al and an alkaline-earth metal compound on a part of the surface of a honeycomb base material having an SiC phase and an oxide phase containing an Si oxide and impregnating metal Si and metal Al into pores of the honeycomb base material through heating in an inert atmosphere.;COPYRIGHT: (C)2013,JPO&INPIT
机译:解决的问题:为了更容易地形成电极部分并进一步减小体积电阻率。解决方案:蜂窝结构20包括分隔部分22,分隔部分22构成用作流体的流路的多个单元23。该蜂窝状结构体20还包括:电极部32,其作为分隔部22的一部分设置,并具有SiC相;包含Si氧化物,Al氧化物和碱土金属氧化物的氧化物相;以及金属。含有金属Si和金属Al的相,其中金属Al相对于金属Si和金属Al的总量的比例为0.001〜20摩尔%。蜂窝状结构是通过形成含有金属Si和金属Al以及碱的含浸基材而得到的。蜂窝结构是作为分隔部22的一部分的体积电阻率比电极部32高的发热部34。在具有SiC相和包含Si氧化物的氧化物相的蜂窝状基材的表面的一部分上的稀土金属化合物,并且通过在惰性气氛中加热而将金属Si和金属Al浸渍到蜂窝状基材的孔中。 :(C)2013,JPO&INPIT

著录项

  • 公开/公告号JP2012214364A

    专利类型

  • 公开/公告日2012-11-08

    原文格式PDF

  • 申请/专利权人 NGK INSULATORS LTD;

    申请/专利号JP20120053090

  • 申请日2012-03-09

  • 分类号C04B41/85;C04B41/88;C04B38/00;C04B35/565;B01J35/04;B01J37/02;B01J37/08;

  • 国家 JP

  • 入库时间 2022-08-21 17:43:56

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