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A method for the production of field effect transistors with art for the local adaptation of the transistor characteristics by using more advanced laser / flash light curing method is suitable also for the production of transistor cells of srams - cells
A method for the production of field effect transistors with art for the local adaptation of the transistor characteristics by using more advanced laser / flash light curing method is suitable also for the production of transistor cells of srams - cells
A method with:selective modification of surface properties of a first component area of a semiconductor component and a second component region of the semiconductor component, in order to a different optical response behavior in the first component region and the second component area in relation to radiation to provide a specified wavelength range;the selective modification of the surface properties, a provision of a material layer with a specified optical properties over the first component region and / or the second component comprises field, in order to obtain the different optical response behavior;Forming a first metal silicide in the first component area on the basis of a first reaction temperature, the surface by irradiation of the first component terrain with radiation of the specified wavelength range is generated; and forming a second metal silicide in the second component area on the basis of a second reaction temperature, the surface by irradiation of the second component terrain with radiation of the specified wavelength range is generated, wherein the first temperature is lower than the second temperature.
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