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large area sources that damage the needle samples for analysis using a focused ion beam fabrication method
large area sources that damage the needle samples for analysis using a focused ion beam fabrication method
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机译：大面积放射源会损坏针状样品，以使用聚焦离子束制造方法进行分析
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摘要
invention FIB (Focused Ion Beam) and using three-dimensional circle needle (3-D Atom Probe ) relates to a method for analyzing the specimen produced by the silicon wafer-based thin-film samples as designated in the circular needle sample analysis to minimize sample damage by Ga ions and increase the aspect ratio, reliability, and enables the needle circle in the stability analysis will, to a technique for making the specimen. ; specimen manufacturing method according to the invention the circular needle analysis comprising the steps of: forming a first capping layer on the metal thin film specimen, the first metal capping layer forming a second capping layer on the metal, and the first and second capping layer are formed of metal thin film specimen is fixed to the post, the focused ion beam to pass through the annular mask is less than the radius of the thin film specimen predetermined size After milling to the first milling step, and the first through the mill until the second milling step of milling after removing the mask inside of the ring-shaped mask, and a cutting-edge radius of the thin film sample characterized in that it be less than 20nm.
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机译：发明的FIB（聚焦离子束）并使用三维圆针（3-D Atom Probe），涉及一种分析由圆针样品分析中指定的基于硅晶片的薄膜样品产生的样品以最小化的方法样品被Ga离子破坏并增加了长宽比，提高了可靠性，并使针头圆在稳定性分析中将成为一种制造样品的技术。 ;根据本发明的样品制造方法，圆形针分析包括以下步骤：在金属薄膜样品上形成第一覆盖层，第一金属覆盖层在金属上形成第二覆盖层，并且第一和第二覆盖层为由金属薄膜制成的样品试样固定在柱子上，聚焦的离子束穿过环形掩模的半径小于薄膜试样的预定尺寸的半径。研磨至第一研磨步骤后，先经过研磨机直至第二个研磨步骤是在去除环形掩模内部的掩模之后进行研磨，其特征在于该薄膜样品的尖端半径小于20nm。
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