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首页> 外文会议>Microelectronics technology and devices - SBMicro 2011 >Analysis of Focused Ion Beam Damages in Optoelectronic Devices Fabrication
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Analysis of Focused Ion Beam Damages in Optoelectronic Devices Fabrication

机译：光电器件制造中聚焦离子束损伤的分析

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摘要

A study of the damages caused by gallium focused ion beam (FIB) is presented. Potential damages caused by local heating, ion implantation, and selective sputtering are presented. Preliminary analysis shows that local heating is negligible. Gallium implantation is shown to occur over areas tens of nanometers thick. Gallium accumulation as well as selective sputtering during Ⅲ-Ⅴ compound milling is expected. Particularly, for GaAs, this effect leads to gallium segregation and the formation of metallic clusters. Microdisks resonators are fabricated using FIB milling of different emission currents. It is shown that for higher emission current, thus higher implantation doses, the cavity quality factor rapidly decreases.
机译：提出了对聚焦镓离子束（FIB）造成的损害的研究。提出了由局部加热，离子注入和选择性溅射引起的潜在损坏。初步分析表明，局部加热可以忽略不计。镓注入显示出发生在几十纳米厚的区域上。预期在Ⅲ-Ⅴ族化合物铣削过程中会积累镓并进行选择性溅射。特别地，对于GaAs，该效应导致镓偏析并形成金属簇。使用FIB铣削不同的发射电流来制造微盘谐振器。结果表明，对于更高的发射电流，因此对于更高的注入剂量，腔质量因数迅速降低。

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  • 来源
  • 会议地点 Joao Pessoa(BR);Joao Pessoa(BR)
  • 作者

    F. Vallini; L. A. M. Barea; E. F. dos Reis; A. A. von Zuben; N. C. Frateschi;

  • 作者单位

    Laboratorio de Pesquisa em Dispositivos, Departamento de Fisica Aplicada, Instituto de Fisica Gleb Wataghin C.P. 6165, Universidade Estadual de Campinas, 13083-970, Campinas, SP, Brasil;

    Laboratorio de Pesquisa em Dispositivos, Departamento de Fisica Aplicada, Instituto de Fisica Gleb Wataghin C.P. 6165, Universidade Estadual de Campinas, 13083-970, Campinas, SP, Brasil;

    Laboratorio de Pesquisa em Dispositivos, Departamento de Fisica Aplicada, Instituto de Fisica Gleb Wataghin C.P. 6165, Universidade Estadual de Campinas, 13083-970, Campinas, SP, Brasil;

    Laboratorio de Pesquisa em Dispositivos, Departamento de Fisica Aplicada, Instituto de Fisica Gleb Wataghin C.P. 6165, Universidade Estadual de Campinas, 13083-970, Campinas, SP, Brasil;

    Laboratorio de Pesquisa em Dispositivos, Departamento de Fisica Aplicada, Instituto de Fisica Gleb Wataghin C.P. 6165, Universidade Estadual de Campinas, 13083-970, Campinas, SP, Brasil;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
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