首页> 外国专利> SLURRY FOR POLISHING A PHASE CHANGE MATERIAL CAPABLE OF EMBODYING HIGH QUALITY POLISHING SURFACE BY MINIMIZING SURFACE DEFECTS SUCH AS SCRATCH AND A METHOD FOR PATTERNING POLISHING PHASE CHANGE MATERIAL USING THE SAME

SLURRY FOR POLISHING A PHASE CHANGE MATERIAL CAPABLE OF EMBODYING HIGH QUALITY POLISHING SURFACE BY MINIMIZING SURFACE DEFECTS SUCH AS SCRATCH AND A METHOD FOR PATTERNING POLISHING PHASE CHANGE MATERIAL USING THE SAME

机译:通过最小化表面缺陷(例如刮擦)来抛光可修饰高品质抛光表面的相变材料的浆液和使用相同的方法来修饰抛光相变材料的方法

摘要

PURPOSE: Slurry for polishing a phase change material is provided to polish the phase change material in which the state of the phase change material before the polishing is crystalline and to improve the polishing selectivity of the phase change material and insulating layer.;CONSTITUTION: Slurry for polishing a phase change material comprises abrasives, oxidant with the reference reduction potential larger than perchlorates, and ultrapure water. The phase change material is crystalline chalcogen binary alloy or chalcogen complex alloy. A method for manufacturing a phase change device comprises the steps of: preparing a substrate(110); forming a phase change material layer(130) with a crystalline phase on the substrate; and removing a part of the phase change material layer through a chemical mechanical polishing process using the slurry for polishing a phase change material.;COPYRIGHT KIPO 2011
机译:目的:提供用于抛光相变材料的浆料,以抛光相变材料,其中相变材料在抛光前的状态为结晶状态,并提高相变材料和绝缘层的抛光选择性。用于抛光相变材料的材料包括磨料,参考还原电位大于高氯酸盐的氧化剂和超纯水。相变材料是结晶硫属元素二元合金或硫属元素复合合金。一种用于制造相变器件的方法,包括以下步骤:准备衬底(110);在基板上形成具有结晶相的相变材料层(130)。并通过化学机械抛光工艺使用相变材料抛光液除去部分相变材料层。; COPYRIGHT KIPO 2011

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