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MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY, AND METHODS FOR INITIALIZING MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY

机译:磁存储器元件,磁存储器以及用于初始化磁存储器元件和磁存储器的方法

摘要

Disclosed is a magnetic memory element which is provided with a first magnetization free layer, a nonmagnetic layer, a reference layer, a first magnetization fixed layer group, and a first blocking layer. The first magnetization free layer is composed of a ferromagnetic material having perpendicular magnetic anisotropy, and is provided with a first magnetization fixed region, a second magnetization fixed region, and a magnetization free region. The nonmagnetic layer is provided in the vicinity of the first magnetization free layer. The reference layer is composed of a ferromagnetic material, and is provided on the nonmagnetic layer. The first magnetization fixed layer group is provided in the vicinity of the first magnetization fixed region. The first blocking layer is provided between the first magnetization fixed layer group and the first magnetization fixed region or is provided by being sandwiched between the layers in the first magnetization fixed layer group.
机译:公开了一种磁性存储元件,其具有第一磁化自由层,非磁性层,参考层,第一磁化固定层组和第一阻挡层。第一磁化自由层由具有垂直磁各向异性的铁磁材料构成,并具有第一磁化固定区域,第二磁化固定区域和磁化自由区​​域。非磁性层设置在第一磁化自由层附近。参考层由铁磁材料构成,并设置在非磁性层上。第一磁化固定层组设置在第一磁化固定区域的附近。第一阻挡层设置在第一磁化固定层组与第一磁化固定区域之间,或者通过被夹在第一磁化固定层组中的各层之间而设置。

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