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METHOD OF FORMING PECVD SILICON-RICH OXIDE LAYER FOR REDUCED UV CHARGING IN AN EEPROM
METHOD OF FORMING PECVD SILICON-RICH OXIDE LAYER FOR REDUCED UV CHARGING IN AN EEPROM
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机译:在EEPROM中形成PECVD富硅氧化物层以减少UV电荷的方法
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摘要
A Si-rich silicon oxide layer having reduced UV transmission is deposited by PECVD, on an interlayer dielectric, prior to metallization, thereby reducing Vt. Embodiments include depositing a UV opaque Si-rich silicon oxide layer having an R.I. of 1.7 to 2.0.
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机译:在金属化之前,通过PECVD在层间电介质上沉积具有降低的紫外线透射率的富硅氧化硅层,从而降低V t Sub>。实施例包括沉积具有1.7至2.0的R.I.的UV不透明的富含Si的氧化硅层。
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