PECVD SILICON-RICH OXIDE LAYER FOR REDUCED UV CHARGING IN AN EEPROM

• 1. PECVD富含硅的氧化物层以减少EEPROM中的UV充电 [P] . 中国专利： CN1823414A . 2006-08-23
• 2. 用于降低后段处理中紫外线引起的硅－氧化物－氮化物－氧化物－硅双位闪存器件充电的紫外线阻障层 [P] . 中国专利： CN100533773C . 2009.08.26
• 3. METHOD OF FORMING PECVD SILICON-RICH OXIDE LAYER FOR REDUCED UV CHARGING IN AN EEPROM [P] . 欧洲知识产权局专利： EP1644974B1 . 2011-06-15

  机译： 在EEPROM中形成PECVD富硅氧化物层以减少UV电荷的方法

• 4. PECVD SILICON-RICH OXIDE LAYER FOR REDUCED UV CHARGING IN AN EEPROM [P] . 欧洲知识产权局专利： EP1644974A2 . 2006-04-12

  机译： PECVD富硅氧化物层，用于减少EEPROM中的紫外线

• 5. PECVD SILICON-RICH OXIDE LAYER FOR REDUCED UV CHARGING IN AN EEPROM [P] . 韩国专利： KR20060030896A . 2006-04-11

  机译： PECVD富硅氧化物层，用于减少EEPROM中的紫外线

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