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GALLIUM NITRIDE BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME, GALLIUM NITRIDE BASED LIGHT-EMITTING DIODE, EPITAXIAL WAFER, AND METHOD FOR FABRICATING GALLIUM NITRIDE LIGHT-EMITTING DIODE
GALLIUM NITRIDE BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME, GALLIUM NITRIDE BASED LIGHT-EMITTING DIODE, EPITAXIAL WAFER, AND METHOD FOR FABRICATING GALLIUM NITRIDE LIGHT-EMITTING DIODE
Provided is a gallium nitride based semiconductor light-emitting device with a structure capable of enhancing the degree of polarization. A light-emitting diode 11a is provided with a semiconductor region 13, an InGaN layer 15 and an active layer 17. The semiconductor region 13 has a primary surface 13a having semipolar nature, and is made of GaN or AlGaN. The primary surface 13a of the semiconductor region 13 is inclined at an angle α with respect to a plane Sc perpendicular to a reference axis Cx which extends in a direction of the [0001] axis in the primary surface 13a. The thickness D13 of the semiconductor region 13 is larger than the thickness DInGaN of the InGaN layer 17, and the thickness DInGaN of the InGaN layer 15 is not less than 150 nm. The InGaN layer 15 is provided directly on the primary surface 13a of the semiconductor region 13 and is in contact with the primary surface 13a. The active layer 17 is provided on a primary surface 15a of the InGaN layer 15 and is in contact with this primary surface 15a. The active layer 17 includes well layers 21 of InGaN.
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