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首页> 外文期刊>Materials science in semiconductor processing >Optimizing n-type contact design and chip size for high-performance indium gallium nitride/gallium nitride-based thin-film vertical light-emitting diode
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Optimizing n-type contact design and chip size for high-performance indium gallium nitride/gallium nitride-based thin-film vertical light-emitting diode

机译：优化高性能氮化铟镓/氮化镓基薄膜垂直发光二极管的n型触点设计和芯片尺寸

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摘要

The effects of the n-contact design and chip size on the electrical, optical and thermal characteristics of thin-film vertical light-emitting diodes (VLEDs) were investigated to optimize GaN-based LED performance for solid-state lighting applications. For the small (chip size: 1000 x 1000 mu m(2)) and large (1450 x 1450 mu m(2)) VLEDs, the forward bias voltages are decreased from 322 to 3.12 V at 350 mA and from 3.44 to 3.16 Vat 700 mA, respectively, as the number of n-contact via holes is increased. The small LEDs give maximum output powers of 651.0-675.4 mW at a drive current of 350 mA, while the large VLEDs show the light output powers in the range 1356.7-1380.2 mW, 700 mA, With increasing drive current, the small chips go through more severe degradation in the wall-plug efficiency than the large chips. The small chips give the junction temperatures in the range 51.1-57.2 degrees C at 350 mA, while the large chips show the junction temperatures of 83.1-93.0 degrees C at 700 mA, The small LED chips exhibit lower junction temperatures when equipped with more n-contact via holes. (C) 2014 Elsevier Ltd. All rights reserved.
机译：研究了n触点设计和芯片尺寸对薄膜垂直发光二极管（VLED）的电，光学和热特性的影响，以优化基于GaN的LED在固态照明应用中的性能。对于小型（芯片尺寸：1000 x 1000μm（2））和大型（1450 x 1450μm（2））VLED，正向偏置电压在350 mA下从322降至3.12 V，从3.44 V降至3.16 Vat随着n接触通孔数量的增加，分别为700 mA。小型LED在350 mA的驱动电流下可提供651.0-675.4 mW的最大输出功率，而大型VLED在1356.7-1380.2 mW（700 mA）的范围内显示光输出功率，随着驱动电流的增加，小型芯片会通过与大芯片相比，墙上插头效率的下降更为严重。小芯片在350 mA时的结温为51.1-57.2摄氏度，而大芯片在700 mA时的结温为83.1-93.0摄氏度。 -通过孔接触。 （C）2014 Elsevier Ltd.保留所有权利。

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