A GaN-based semiconductor light-emitting element (1) includes (A) a first GaN-based compound semiconductor layer (21) of n-conductivity type, (B) an active layer (23), (C) a second GaN-based compound semiconductor layer (22) of p-conductivity type, (D) a first electrode (31) electrically connected to the first GaN-based compound semiconductor layer (21), (E) a second electrode (32) electrically connected to the second GaN-based compound semiconductor layer (22), (F) an impurity diffusion-preventing layer (24) composed of an undoped GaN-based compound semiconductor, the impurity diffusion-preventing layer (24) preventing a p-type impurity from diffusing into the active layer, and (G) a laminated structure (40) or a third GaN-based compound semiconductor layer (50) of p-conductivity type. The impurity diffusion-preventing layer (24) and the laminated structure (40) or the third GaN-based compound semiconductor layer (50) of p-conductivity type are disposed, between the active layer (23) and the second GaN-based compound semiconductor layer (22), in that order from the active layer side.
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