The method of maskless lithography rasterization techniques based on global optimization, a computer readable medium and apparatus

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• 2. 光刻掩模光学修正的方法、装置及计算机可读存储介质 [P] . 中国专利： CN110376843B . 2019.12.24
• 3. System and method for maskless lithography rasterization techniques based on global optimization [P] . 日本专利： JP2008529090A . 2008-07-31

  机译： 基于全局优化的无掩模光刻光栅化系统和方法

• 4. Method and system for a maskless lithography rasterization technique based on global optimization [P] . 美国专利： US7469058B2 . 2008-12-23

  机译： 基于全局优化的无掩模光刻光栅化技术及方法

• 5. METHOD AND SYSTEM FOR A MASKLESS LITHOGRAPHY RASTERIZATION TECHNIQUE BASED ON GLOBAL OPTIMIZATION [P] . 韩国专利： KR20070104444A . 2007-10-25

  机译： 基于全局优化的无光刻光刻技术的方法和系统

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