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SURFACE TREATMENT METHOD OF AIN CRYSTAL, AIN CRYSTAL SUBSTRATE, AIN CRYSTAL SUBSTRATE WITH EPITAXIAL LAYER, AND SEMICONDUCTOR DEVICE
SURFACE TREATMENT METHOD OF AIN CRYSTAL, AIN CRYSTAL SUBSTRATE, AIN CRYSTAL SUBSTRATE WITH EPITAXIAL LAYER, AND SEMICONDUCTOR DEVICE
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机译：主晶体，主晶体基体，具有磊晶层的主晶体基体和半导体器件的表面处理方法
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摘要
PROBLEM TO BE SOLVED: To provide a surface treatment method of an AIN crystal for efficiently forming a surface of excellent morphology in an AlN crystal.;SOLUTION: In the surface treatment method of the AIN crystal in which the surface of AIN crystal 1 is chemically and mechanically polished, abrasive grains of slurry 17 that are used in chemical and mechanical polishing includes: high-hardness abrasive grains having hardness higher than that of the AIN crystal 1 and low-hardness abrasive grains having hardness lower than that of the AIN crystal 1. The volume ratio of the high-hardness abrasive grains with respect to the low-hardness abrasive grains in the abrasive grains 16 of the slurry 17 can range from 5:95 to 70:30.;COPYRIGHT: (C)2011,JPO&INPIT
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