首页> 外国专利> METHOD OF MANUFACTURING QUANTUM WELL STRUCTURE, SEMICONDUCTOR LASER, AND COMPOUND SEMICONDUCTOR LAYER, AND METHOD OF CONTROLLING MBE (MOLECULAR BEAM EPITAXY) DEVICE

METHOD OF MANUFACTURING QUANTUM WELL STRUCTURE, SEMICONDUCTOR LASER, AND COMPOUND SEMICONDUCTOR LAYER, AND METHOD OF CONTROLLING MBE (MOLECULAR BEAM EPITAXY) DEVICE

机译：制造量子阱结构，半导体激光和复合半导体层的方法以及控制MBE（分子束外延）装置的方法

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摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a quantum well structure having a well layer with high photoluminescence intensity, a semiconductor laser, and a compound semiconductor layer with the high photoluminescence intensity, and to provide a method of controlling a molecular beam epitaxy device using the photoluminescence intensity of the compound semiconductor layer.;SOLUTION: The quantum well structure has the well layer consisting of InGaAs or GaInNAs, wherein an oxygen concentration of the well layer is no more than 5×10¹⁶ atoms/cm³.;COPYRIGHT: (C)2011,JPO&INPIT

机译：解决的问题：提供一种制造具有高光致发光强度的阱层的量子阱结构的方法，一种半导体激光器以及具有高光致发光强度的化合物半导体层，并提供一种控制分子束外延的方法。 SOLUTION：量子阱结构具有由InGaAs或GaInNAs组成的阱层，其中阱层的氧浓度不超过5乘以10 ^{16 atoms / cm ^{3 .; COPYRIGHT：（C）2011，JPO＆INPIT}}

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公开/公告号JP2010258134A

专利类型
公开/公告日2010-11-11

原文格式PDF
申请/专利权人 SUMITOMO ELECTRIC IND LTD;
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申请/专利号JP20090104899
发明设计人 SAGA NORIHIRO;
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申请日2009-04-23
分类号H01S5/343;H01L21/203;
国家 JP
入库时间 2022-08-21 18:24:00

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