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Analysis of strain in epilayers and heterostructures of antimony based III-V compound semiconductors grown by molecular beam epitaxy

机译：分子束外延生长的锑基III-V族化合物半导体的外延层应变和异质结构分析

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制度:新 ; 文部省報告番号:乙709号 ; 学位の種類:工学博士 ; 授与年月日:1989-02-09 ; 早大学位記番号:新1481 ; 理工学図書館請求番号:1253

机译：系统：新；教育部报告号：大津709；学位类型：工程学博士；授予日期：1989-02-09；早稻田大学文凭：新1481；科学与工程图书馆申请号：1253

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Villaflor Antonio B.;
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年度 1989
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专利

1. Studies on incorporation of As_2 and As_4 in III-V compound semiconductors with two group V elements grown by molecular beam epitaxy [J] . Zhi-Biao Hao, Zai-Yuan Ren, Wen-Ping Guo Journal of Crystal Growth . 2001,第3a4期

机译：用分子束外延法生长具有两个V族元素的III-V族化合物半导体中As_2和As_4的掺入研究
2. OVERVIEW OF InAs-BASED III-V COMPOUND AND Si/Ge SEMICONDUCTOR EPITAXIAL STRAIN-INDUCED ISLANDS AND QUANTUM DOTS GROWN BY LIQUID PHASE EPITAXY [J] . Gambaryan K.M. Armenian Journal of Physics . 2008,第4期

机译：液相扩散法生长的InAs基III-V族化合物和Si / Ge半导体表观应变诱发的孤岛和量子点
3. Ultrafast carrier dynamics in III-V semiconductors grown by molecular-beam epitaxy at very low substrate temperatures [J] . Gupta S., Whitaker J.F. IEEE Journal of Quantum Electronics . 1992,第10期

机译：在非常低的衬底温度下通过分子束外延生长的III-V半导体中的超快载流子动力学
4. Surfactant-mediated molecular-beam epitaxy of highly-strained III-V semiconductor heterostructures [C] . Tournie, E., Ploog, Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on . 1994

机译：表面活性剂介导的高应变III-V半导体异质结构的分子束外延
5. Nanometer characterization of quantum compound semiconductor heterostructures grown by molecular beam epitaxy. [D] . Wang, Yongqian (Jack). 2002

机译：通过分子束外延生长的量子化合物半导体异质结构的纳米表征。
6. Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy [O] . Xian Gao, Zhipeng Wei, Fenghuan Zhao, -1

机译：分子束外延生长GaAsSb外延层中的局部状态研究
7. Investigation of structural characteristics of III-V semiconductor nanowires grown by molecular beam epitaxy [O] . Zhang Zhi 2015

机译：分子束外延生长III-V族半导体纳米线的结构特征研究
8. Ultrafast Detectors Using III-V Epilayers Grown by Molecular-Beam Epitaxy at LowTemperatures Have 375-GHz Bandwidths [R] . Gupta, S., Williamson, S. L., Whitaker, J. F., 1992

机译：在低温下使用分子束外延生长的III-V外延层的超快速探测器具有375-GHz带宽

Analysis of strain in epilayers and heterostructures of antimony based III-V compound semiconductors grown by molecular beam epitaxy

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