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Method for producing a semi-conductor crystal on base layer of floating zone process, comprises partially heating and melting a raw material crystal for forming melt zone under rotation of the raw material-crystal by induction heating coil
Method for producing a semi-conductor crystal on base layer of floating zone process, comprises partially heating and melting a raw material crystal for forming melt zone under rotation of the raw material-crystal by induction heating coil
The method for the production of a semi-conductor crystal on base layer of a floating zone process, comprises partially heating and melting a raw material crystal (5) for forming a melt zone under rotation of the raw material-crystal by an induction heating coil (7), and moving the melt zone from an end portion to another end portion of the raw material crystal in order to let grow the semi-conductor crystal under rotation of the semi-conductor crystal. A rotation direction of the semi-conductor crystal is alternatively changed. The method for the production of a semi-conductor crystal on base layer of a floating zone process, comprises partially heating and melting a raw material crystal (5) for forming a melt zone under rotation of the raw material-crystal by an induction heating coil (7), and moving the melt zone from an end portion to another end portion of the raw material crystal in order to let grow the semi-conductor crystal under rotation of the semi-conductor crystal. A rotation direction of the semi-conductor crystal is alternatively changed and the rotation direction and/or the number of revolutions of the raw material crystal is changed during the growth of the semiconductor crystals in order to let grow the semi-conductor crystal. The rotation direction and/or the number of revolutions of the raw material crystal is synchronically changed with the change of the rotation direction of the semiconductor crystals. The rotation direction of the raw material crystal is changed in opposite direction to the rotation direction of the semiconductor crystal, when the rotation direction of the raw material crystal is changed in order to let grow the semi-conductor crystal. The rotation direction of the raw-material crystal and the semiconductor crystal are opposite to each other. The number of revolutions of the raw material crystal is adjusted so that it is greater than the number of revolutions of the raw material, when the raw material crystal and the semi-conductor crystal have same rotation direction. The number of revolutions of the raw material crystal is adjusted so that it is equal or smaller than the number of revolutions of the semi-conductor crystals. A diameter of the produced semiconductor-crystal is adjusted to 150 mm or more. An independent claim is included for a device for the production of a semi-conductor crystal on the base layer of a floating zone process.
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