首页> 外国专利> Producing hard material layers by magnetron sputtering, comprises carrying out a substrate cleaning and then a substrate pre-treatment, in which a coating material is deposited on a substrate with a magnetron in pure inert gas atmosphere

Producing hard material layers by magnetron sputtering, comprises carrying out a substrate cleaning and then a substrate pre-treatment, in which a coating material is deposited on a substrate with a magnetron in pure inert gas atmosphere

机译:通过磁控溅射制造硬质材料层包括进行基板清洁,然后进行基板预处理,其中在纯惰性气体气氛中用磁控管将涂料沉积在基板上

摘要

The method comprises carrying out a substrate pre-treatment, in which a coating material (2) is deposited on the substrate (3) with a magnetron in pure inert gas atmosphere, where the substrate is at a negative bias, which is high, so that the coating material is partially implanted into the substrate. The negative bias is controlled during the substrate pre-treatment, so that a balance between the deposited and re-etched material is adjusted. The negative bias of the substrate is adjusted to -800 V to -1200 V during the substrate pre-treatment. The method comprises carrying out a substrate pre-treatment, in which a coating material (2) is deposited on the substrate (3) with a magnetron in pure inert gas atmosphere, where the substrate is at a negative bias, which is high, so that the coating material is partially implanted into the substrate. The negative bias is controlled during the substrate pre-treatment, so that a balance between the deposited and re-etched material is adjusted. The negative bias of the substrate is adjusted to -800 V to -1200 V during the substrate pre-treatment. Before the substrate pre-treatment, a substrate cleaning is carried out, in which the coating material is sputtered on the substrate with the magnetron in pure inert gas atmosphere, where the substrate is at negative bias, which is high, so that a removal of the substrate material adjusts itself in spite of coating. The negative bias of the substrate is adjusted to -1500 V during the substrate cleaning, and is reduced to an amount of less than 400V at the end of the substrate cleaning. The negative bias of the substrate is reduced to -50 V to -200 V for a layer construction on the substrate. The bias reduction takes place continuously or in steps of 100 V up to 200 V. The substrate pre-treatment takes place with chromium, titanium, titanium aluminide, zirconium, vanadium, niobium, tantalum, tungsten or tungsten carbide. For the substrate pre-treatment and the layer construction, a combination of the different coating materials is used. The reactive hard material layer is deposited on the substrate for the layer construction. For the layer construction on the substrate, carbon from a highly-pure graphite target is deposited in a weak reactive atmosphere containing argon and ethyne or argon and nitrogen, where a super-hard ta-carbon (C)-layer, tantalum-C:hydrogen (H) layer or a-C:H layer grows up on the substrate. The gas flow of the reactive gases is adjusted to 1-20% of the argon flow. For the layer construction on the substrate, the deposition of the carbon takes place in the atmosphere with a mixture of argon and neon and in pure neon atmosphere.
机译:该方法包括进行基板预处理,其中在纯惰性气体气氛中用磁控管将涂料(2)沉积在基板(3)上,其中基板处于高的负偏压下,因此涂层材料被部分植入到基材中。在基板预处理期间控制负偏压,以便调整沉积和重新蚀刻的材料之间的平衡。在基板预处理期间,将基板的负偏压调整为-800 V至-1200V。该方法包括进行基板预处理,其中在纯惰性气体气氛中用磁控管将涂料(2)沉积在基板(3)上,其中基板处于高的负偏压下,因此涂层材料被部分植入到基材中。在基板预处理期间控制负偏压,以便调整沉积和重新蚀刻的材料之间的平衡。在基板预处理期间,将基板的负偏压调整为-800 V至-1200V。在对基板进行预处理之前,先进行基板清洁,其中在磁极处于纯惰性气体气氛中,使用磁控管将涂料溅射到基板上,其中基板处于高负偏压状态,因此去除了尽管有涂层,基底材料仍会自行调整。在基板清洁期间,将基板的负偏压调整为-1500 V,并在基板清洁结束时将其减小到小于400V的量。对于在衬底上的层结构,衬底的负偏压减小到-50 V至-200V。偏压降低可以连续进行,也可以以100 V至200 V的步长逐步降低。用铬,钛,铝化钛,锆,钒,铌,钽,钨或碳化钨对基板进行预处理。对于基材预处理和层结构,可以使用不同涂料的组合。反应性硬质材料层沉积在基板上以进行层构造。为了在基材上进行层构建,将高纯度石墨靶材中的碳沉积在包含氩气和乙炔或氩气和氮气的弱反应性气氛中,其中超硬ta-碳(C)层为钽C:氢(H)层或aC:H层在基板上生长。将反应气体的气体流量调整为氩气流量的1-20%。对于在基板上的层构造,碳的沉积在具有氩和氖的混合物的气氛中以及在纯氖气氛中进行。

著录项

  • 公开/公告号DE102009015478A1

    专利类型

  • 公开/公告日2010-09-30

    原文格式PDF

  • 申请/专利权人 ROTH & RAU AG;

    申请/专利号DE20091015478

  • 发明设计人 ROST DIRK;MUENZ WOLF-DIETER;

    申请日2009-03-26

  • 分类号C23C14/35;C23C14/06;

  • 国家 DE

  • 入库时间 2022-08-21 18:28:20

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