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Test structure for estimating the electron migration effects which are caused by means of porous barrier
Test structure for estimating the electron migration effects which are caused by means of porous barrier
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机译:评估通过多孔势垒引起的电子迁移效应的测试结构
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摘要
Test structure for estimating the electron migration we in a first metallization layer of a semiconductor component, wherein the test structure comprises:a first test contact by means of the guiding (207) with a barrier layer (212) and a metal, wherein the first test contact by means of the guiding (207) is made in the first metallization plane;a feed line (203), which, in a second, lower metallization layer is formed, and with the first test contact by means of the guiding (207) is connected, wherein the feed line (203) is designed in such a way that they have a higher probability for the formation of a hollow space in comparison to the first test contact by means of the guiding (207) when the barrier layer (212) on an underside of the first test contact by means of the guiding (207) has a hole, so that a not coherent interface with the feed line (203) to form;a test metal line (206), which, in the first metallization layer and formed with the first test contact by means of the guiding (207) is arranged in the downward direction and connected;a connection line (204), which, in the first metallization layer is formed and for the feed line (203) is provided, wherein the connecting line..
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