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Test structure for estimating the electron migration effects which are caused by means of porous barrier

机译:评估通过多孔势垒引起的电子迁移效应的测试结构

摘要

Test structure for estimating the electron migration we in a first metallization layer of a semiconductor component, wherein the test structure comprises:a first test contact by means of the guiding (207) with a barrier layer (212) and a metal, wherein the first test contact by means of the guiding (207) is made in the first metallization plane;a feed line (203), which, in a second, lower metallization layer is formed, and with the first test contact by means of the guiding (207) is connected, wherein the feed line (203) is designed in such a way that they have a higher probability for the formation of a hollow space in comparison to the first test contact by means of the guiding (207) when the barrier layer (212) on an underside of the first test contact by means of the guiding (207) has a hole, so that a not coherent interface with the feed line (203) to form;a test metal line (206), which, in the first metallization layer and formed with the first test contact by means of the guiding (207) is arranged in the downward direction and connected;a connection line (204), which, in the first metallization layer is formed and for the feed line (203) is provided, wherein the connecting line..
机译:用于估计电子在半导体部件的第一金属化层中的迁移的测试结构,其中该测试结构包括:借助于引导件(207)与阻挡层(212)和金属的第一测试接触,其中第一在第一金属化平面中进行借助于引导件(207)的测试接触;在第二下部金属化层中形成的进料管线(203),以及通过引导件(207)与第一测试接触件)被连接,其中,馈电管线(203)以如下方式设计:与第一测试触点相比,当阻挡层( 212)在第一测试触头的下侧上通过导向装置(207)形成一个孔,以使与进料管线(203)的界面不连贯,形成测试金属管线(206),第一金属化层,并通过guidin与第一测试触点形成g(207)沿向下方向布置并连接;连接线(204),其在第一金属化层中形成并用于进料线(203),其中该连接线。

著录项

  • 公开/公告号DE102006025365B4

    专利类型

  • 公开/公告日2010-10-07

    原文格式PDF

  • 申请/专利权人

    申请/专利号DE20061025365

  • 发明设计人

    申请日2006-05-31

  • 分类号H01L23/544;H01L21/66;H01L23/52;

  • 国家 DE

  • 入库时间 2022-08-21 18:29:06

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