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Test structure with increased robustness with respect to barrier defects in the contact hole openings in the case of the estimate of electron migration effects as well as corresponding production method
Test structure with increased robustness with respect to barrier defects in the contact hole openings in the case of the estimate of electron migration effects as well as corresponding production method
Chain structure for migration tests with:a first line segment and a second line segment, which in a first metallization layer are formed, which is arranged above a semiconductor substrate; wherein the width of the first conductor segment is shorter than the width of the second conductor segment is;a first contact opening which, with the first line segment is connected to and in the first metallization layer is formed, the first contact opening a first current blocking capability of masses on a lower surface of the first has a contact lead-through;a second contact opening, which with the second line segment is connected to and in the first metallization layer is formed, the second contact opening a second masses current blocking capability, the first mass flow capable of blocking resistance is smaller than the second mass flow blocking liquid capable of; anda third line segment, which in a second metallization layer and formed with the first contact opening and the second contact opening is connected, andthe chain structure more of the first line segments, a plurality of the second line segments and a plurality of the third line segments, each first..
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