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METHOD OF FORMING MAGNETIC TUNNEL JUNCTION BASED ON NANOSIZE METAL-INSULATOR-METAL STRUCTURES AND MAGNETIC TUNNEL JUNCTION STRUCURE BASED ON NANOSIZE METAL-INSULATOR-METAL STRUCTURES (VERSIONS)
METHOD OF FORMING MAGNETIC TUNNEL JUNCTION BASED ON NANOSIZE METAL-INSULATOR-METAL STRUCTURES AND MAGNETIC TUNNEL JUNCTION STRUCURE BASED ON NANOSIZE METAL-INSULATOR-METAL STRUCTURES (VERSIONS)
FIELD: physics.;SUBSTANCE: method of forming a magnetic tunnel junction based on nanosize metal-insulator-metal structures involves formation of a magnetic tunnel junction on a substrate which has a freely magnetising layer, a fixed magnetisation layer and a tunnel insulating layer. The tunnel insulating layer is formed by depositing a dielectric layer on the freely magnetising layer. An iron layer is deposited onto the substrate in a vacuum and a silicon layer is then deposited on the iron layer. Further, the surface of the deposited silicon is oxidised, after which a silicon layer is deposited on the resulting silicon oxide layer and an iron layer is then deposited on top. Two layers of ferromagnetic silicide are then formed at the same time under the silicon oxide layer and over the silicon oxide layer through a solid-phase reaction at 400-650°C.;EFFECT: simplification of the method, shorter time for formation of a magnetic tunnel junction and obtaining high values of spin-polarisation due to use of ferromagnetic semimetals as electrodes with easy integration into existing silicon technology.;11 cl, 2 dwg, 1 ex
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机译：基于纳米级金属-绝缘体-金属结构形成磁隧道结的方法涉及在具有自由磁化层，固定磁化层和隧道绝缘层的基板上形成磁隧道结。通过在自由磁化层上沉积电介质层来形成隧道绝缘层。在真空中将铁层沉积到基板上，然后在铁层上沉积硅层。此外，沉积的硅的表面被氧化，然后在所得的氧化硅层上沉积硅层，然后在顶部沉积铁层。然后在400-650°C下通过固相反应同时在氧化硅层下方和氧化硅层上方同时形成两层铁磁硅化物;效果：简化了方法，缩短了形成硅的时间磁性隧道结并由于使用铁磁半金属作为电极并易于集成到现有硅技术中而获得高自旋极化值; 11 cl，2 dwg，1 ex
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