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SIGNAL TRANSMISSION CIRCUIT, SEMICONDUCTOR DEVICE CONTAINING THE SIGNAL TRANSMISSION CIRCUIT, METHOD FOR DESIGNING THE SEMICONDUCTOR CIRCUIT DEVICE, AND CAD DEVICE FOR REALIZING THE DESIGN METHOD
SIGNAL TRANSMISSION CIRCUIT, SEMICONDUCTOR DEVICE CONTAINING THE SIGNAL TRANSMISSION CIRCUIT, METHOD FOR DESIGNING THE SEMICONDUCTOR CIRCUIT DEVICE, AND CAD DEVICE FOR REALIZING THE DESIGN METHOD
A CAD device according to the embodiments includes means that determines signal transmission time of each signal transmission circuit in an LSI circuit, means that determines an output inversion rate of a flip-flop circuit included in each signal transmission circuit when the flip-flop circuit is exposed to radiation, means that determines a signal transmission circuit that is a critical path, means that calculates a total soft error rate of the LSI circuit on the basis of the signal transmission time, the output inversion rate, and a clock period, and means that, when a predetermined soft error rate is less than the total soft error rate of the LSI circuit as a result of comparison, reducing the total soft error rate of the LSI circuit to the extent possible without changing signal transmission time of the signal transmission circuit, which is a critical path.
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