E-FUSE STRUCTURE OF A SEMICONDUCTOR DEVICE, CAPABLE OF IMPROVING ELECTRO-MIGRATION AND THERMO-MIGRATION EFFECTS

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  机译： 保险丝结构，包括保险丝结构的电子保险丝以及包括电子保险丝的半导体器件

• 4. Fuse Structures, E-Fuses Comprising Fuse Structures, and Semiconductor Devices Comprising E-Fuses [P] . 美国专利： US2011298086A1 . 2011-12-08

  机译： 保险丝结构，包括保险丝结构的电子保险丝以及包括电子保险丝的半导体器件

• 5. METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE, CAPABLE OF IMPROVING THE ELECTRO-MIGRATION CHARACTERISTIC, THE ZENER VOLTAGE CHARACTERISTIC, AND THE TIME DEPENDENT DIELECTRIC BREAKDOWN CHARACTERISTIC [P] . 韩国专利： KR20100110123A . 2010-10-12

  机译： 制造能够改善电迁移特性，齐纳电压特性和时间相关介电击穿特性的半导体器件的方法

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