METHOD FOR MANUFACTURING AN IMAGE SENSOR, CAPABLE OF REDUCING SILICON ETCH DAMAGE

• 1. 硅蚀刻液、硅蚀刻方法以及硅鳍片结构体的制造方法 [P] . 中国专利： CN112143500A . 2020-12-29
• 2. 硅通孔工艺中的硅基板背面蚀刻用蚀刻液及使用该蚀刻液的具有硅通孔的半导体芯片的制造方法 [P] . 中国专利： CN102598224A . 2012-07-18
• 3. IMAGE SENSOR CAPABLE OF IMPROVING THE DARK CHARACTERISTIC DETERIORATION DUE TO AN ETCH DAMAGE AND A MANUFACTURING METHOD THEREOF [P] . 韩国专利： KR20100045212A . 2010-05-03

  机译： 能够改善由于刻蚀损坏而引起的黑暗特性劣化的图像传感器及其制造方法

• 4. METHOD FOR MANUFACTURING AN IMAGE SENSOR, CAPABLE OF PREVENTING A DARK DEFECT DUE TO PLASMA DAMAGE IN A TRENCH ETCH [P] . 韩国专利： KR20100079259A . 2010-07-08

  机译： 制造图像传感器的方法，该图像传感器能够防止沟槽蚀刻中由于等离子体损坏而造成的黑暗缺陷

• 5. METHOD FOR MANUFACTURING AN IMAGE SENSOR, CAPABLE OF PREVENTING DAMAGE TO POLY SILICON IN AN ION IMPLANTATION PROCESS [P] . 韩国专利： KR20100078104A . 2010-07-08

  机译： 制造能够防止离子注入过程中多晶硅损伤的图像传感器的方法

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