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METHOD FOR COATING A SILICON CARBIDE FORMING AN INTERFACE LAYER AND A STRUCTURE OF THE SILICON CARBIDE, CAPABLE OF PREVENTING IMPURITIES FROM BEING PENETRATED BY PERFORMING ALL PROCESSES WITHIN A SINGLE CHAMBER
METHOD FOR COATING A SILICON CARBIDE FORMING AN INTERFACE LAYER AND A STRUCTURE OF THE SILICON CARBIDE, CAPABLE OF PREVENTING IMPURITIES FROM BEING PENETRATED BY PERFORMING ALL PROCESSES WITHIN A SINGLE CHAMBER
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机译：形成界面层和碳化硅结构的碳化硅的涂覆方法，能够通过在单个腔室内执行所有过程来防止杂质渗透
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摘要
PURPOSE: A method for coating a silicon carbide forming an interface layer and a structure of the silicon carbide are provided to improve the quality of a product due to a smooth coated surface of the silicon and an excellent print effect and to extend the lifetime of the silicon carbide by preventing a printed silicon carbide from being separated from graphite.;CONSTITUTION: A method for coating a silicon carbide forming an interface layer comprises: a first process which is a cleaning process; a second process forming a poly layer by injecting process gas and depositing silicon layer of a thin film on the surface of graphite; a third process forming the interface layer by injecting carrier gas, increasing the temperature of a vacuum chamber, and making the silicon penetrate into a pore of the graphite surface; a fourth process coating the silicon carbide on the surface of the interface layer by mixing silicone-based gas, methane-based gas, and chlorine-based gas and injecting the mixture into the chamber; and a fifth process which is an annealing process.;COPYRIGHT KIPO 2010
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