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THIN FILM TRANSISTOR FOR STEADILY DRIVING THE THIN FILM TRANSISTOR THROUGH A LOW LEAKAGE CURRENT AND OFF CURRENT

机译：薄膜晶体管，用于通过低泄漏电流和截止电流来稳定驱动薄膜晶体管

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PURPOSE: A thin film transistor and a manufacturing method thereof are provided to obtain the thin film having low leakage current and off current characteristics by forming a metal material on the surface of a channel.;CONSTITUTION: A thin film transistor(TFT) comprises a gate(11), a gate isolation layer(12), a channel(14), a metal material(13), and a source(16a) / drain(16b). The gate isolation layer is included on the gate. The channel is formed in a position corresponding t o the gate of the gate insulation layer. The metal material is formed on the surface of the channel for crystallization of the channel. The source/drain is respectively touched with both sides of the channel.;COPYRIGHT KIPO 2010

机译：目的：提供一种薄膜晶体管及其制造方法，以通过在沟道表面上形成金属材料来获得具有低漏电流和截止电流特性的薄膜。组成：薄膜晶体管（TFT）包括：栅极（11），栅极隔离层（12），沟道（14），金属材料（13）和源极（16a）/漏极（16b）。栅极隔离层包括在栅极上。沟道形成在与栅极绝缘层的栅极相对应的位置中。金属材料形成在通道的表面上以使通道结晶。源/漏分别与通道的两侧接触。; COPYRIGHT KIPO 2010

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公开/公告号KR20100034634A

专利类型
公开/公告日2010-04-01

原文格式PDF
申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;
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申请/专利号KR20080093862
发明设计人 LEE SANG YOON;PARK KYUNG BAE;KIM TAE SANG;YOO BYUNG WOOK;RYU MYUNG KWAN;JUNG JI SIM;SON KYUNG SEOK;KWON JANG YEON;
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申请日2008-09-24
分类号G02F1/136;H01L29/786;
国家 KR
入库时间 2022-08-21 18:33:02

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