首页>
外国专利>
POLY-CRYSTAL SILICON CARBIDE THIN FILM GROWING METHOD BY AN IN-SITU DOPING CAPABLE OF CONTROLLING THE SENSITIVITY, THE RESOLUTION AND THE RESPONSE SPEED OF A SI-MEMS BASED ON A SIC THIN FILM
POLY-CRYSTAL SILICON CARBIDE THIN FILM GROWING METHOD BY AN IN-SITU DOPING CAPABLE OF CONTROLLING THE SENSITIVITY, THE RESOLUTION AND THE RESPONSE SPEED OF A SI-MEMS BASED ON A SIC THIN FILM
PURPOSE: A poly-crystal silicon carbide thin film growing method by an in-situ doping is provided to control the resonant frequency of a micro resonator by controlling the electrical characteristic of a poly-crystal silicon carbide thin film by the nitrogen in-situ doping.;CONSTITUTION: A Si substrate including an oxide film is loaded inside a reaction tube. The inside of the reaction tube is heated to the growth temperature of 1100~1300°C by using the argon and hydrogen of the high purity as a carrier gas(S10). The state of the growth temperature is kept for the half an hour. A poly-crystal silicon carbide thin film is grown up by injecting a hexamethyldisilane and nitrogen gas(S20). The holding time of 3 seconds and 2 seconds are respectively allocated for the stability of temperature and the ventilation of a residual precursor in the prior and the posterior state of the hexamethyldisilane injection process.;COPYRIGHT KIPO 2010
展开▼
