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DEVICE AND METHOD FOR THE HIGH-FREQUENCY ETCHING OF A SUBSTRATE USING A PLASMA ETCHING INSTALLATION AND DEVICE AND METHOD FOR IGNITING A PLASMA AND FOR PULSING THE PLASMA OUTPUT OR ADJUSTING THE SAME UPWARDS
DEVICE AND METHOD FOR THE HIGH-FREQUENCY ETCHING OF A SUBSTRATE USING A PLASMA ETCHING INSTALLATION AND DEVICE AND METHOD FOR IGNITING A PLASMA AND FOR PULSING THE PLASMA OUTPUT OR ADJUSTING THE SAME UPWARDS
The invention relates to a device and a method which can be implemented using said device, for preferably etching a substrate (10) anisotropically, in particular, for etching a structured silicon body using a plasma (14). According to the invention, the plasma (14) is created by a plasma source (13), to which a high-frequency generator (17) is connected for supplying high-frequency output. The generator is in turn connected to a first element which causes a modification in the high-frequency output that is applied to the plasma source (13). In addition, the device preferably comprises a second element which causes the output impedance of the high-frequency generator (17) to be adapted to the respective impedance of the plasma source (13) which is modified as a result of the function of the high-frequency generator. The inventive anisotropic etching method takes place in separate, alternating etching and polymerisation phases, whereby during the etching phase, a higher frequency output than during the deposition phase, up to 5000 watts, is at least periodically applied to the plasma source (13). The inventive device is also suitable for igniting a plasma (14) and for pulsing a plasma output or adjusting the same upwards from an initial value, up to 5000 watts.
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