首页> 外国专利> ULTRAVIOLET-SENSITIVE SCHOTTKY BARRIER PHOTODIODE

ULTRAVIOLET-SENSITIVE SCHOTTKY BARRIER PHOTODIODE

机译：紫外线敏感的肖特基势垒光电二极管

页面导航

摘要
著录项
相似文献

摘要

A Schottky barrier photodiode sensitive in ultraviolet range is performed on the basis of zinc selenide having a nickel barrier layer on the face of ZnSe-substrate and an indium layer on the back side thereof. On the barrier super-thin nickel layer an auxiliary antireflecting coating which includes mixture of putty powder (SnO2) and (InO) indium oxide or a layer of putty powder (SnO) doped by fluorine is performed. The antireflecting coating and metal barrier layer have to back out of crystal edge for a distance which is not less than a sum of free length of minor carriers and width of spatial charge aria in a substrate made of zinc selenide material.

机译：基于在ZnSe衬底的表面上具有镍阻挡层并且在其背面上具有铟层的硒化锌，来执行对紫外线范围敏感的肖特基势垒光电二极管。在阻挡层超薄镍层上进行辅助减反射涂层，该涂层包括腻子粉（SnO2）和（InO）氧化铟的混合物或掺有氟的腻子粉（SnO）层。抗反射涂层和金属阻挡层必须从晶体边缘退回一段距离，该距离不少于硒化锌材料制成的基板中次要载流子的自由长度和空间电荷aria的总和。

著录项

公开/公告号UA48467U

专利类型
公开/公告日2010-03-25

原文格式PDF
申请/专利权人 PEREVERTAILO VOLODYMYR LEONTIIOVYCH;RYZHYKOV VOLODYMYR DIOMYDOVYCH;DOBROVOLSKYI YURII HEORHIOVYCH;SHABASHKEVYCH BORYS HRYHOROVYCH;HALKIN SERHII MYKOLAIOVYCH;VORONKIN YEVHEN FEDOROVYCH;
展开▼

申请/专利号UAU200906302U
发明设计人 PEREVERTAILO VOLODYMYR LEONTIIOVYCH;RYZHYKOV VOLODYMYR DIOMYDOVYCH;DOBROVOLSKYI YURII HEORHIOVYCH;SHABASHKEVYCH BORYS HRYHOROVYCH;HALKIN SERHII MYKOLAIOVYCH;VORONKIN YEVHEN FEDOROVYCH;
展开▼

申请日2009-06-17
分类号H01L31/06;H01L31/0216;H01L31/0264;
国家 UA
入库时间 2022-08-21 18:44:51

相似文献

专利
外文文献
中文文献