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Lanthanide series metal implant to control work function of metal gate electrodes

机译:镧系金属植入物控制金属栅电极的功函数

摘要

Semiconductor devices and fabrication methods are provided, in which metal transistor gates are provided for MOS transistors. Metal nitride is formed above a gate dielectric. A lanthaide series metal is implanted into the metal screen layer above the gate dielectric. The lanthaide metal is contained in the screen layer or at the interface between the screen metal layer and the gate dielectric. This process provides adjustment of the gate electrode work function, thereby tuning the threshold voltage of the resulting PMOS or NMOS transistors.
机译:提供了半导体器件和制造方法,其中为MOS晶体管提供了金属晶体管栅极。在栅极电介质上方形成金属氮化物。镧系金属被注入到栅极电介质上方的金属屏蔽层中。镧系金属包含在丝网层中或丝网金属层与栅极电介质之间的界面处。该过程提供了栅电极功函数的调节,从而调节了所得的PMOS或NMOS晶体管的阈值电压。

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