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Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing

机译:用于半导体加工中高级过程控制的动态计量方案和采样方案

摘要

Systems, methods and mediums are provided for dynamic adjustment of sampling plans in connection with a wafer (or other device) to be measured. The invention adjusts the frequency and/or spatial resolution of measurements on an as-needed basis when one or more events occur that are likely to indicate an internal or external change affecting the manufacturing process or results. The dynamic metrology plan adjusts the spatial resolution of sampling within-wafer by adding, subtracting or replacing candidate points from the sampling plan, in response to certain events which suggest that additional or different measurements of the wafer may be desirable. Further, the invention may be used in connection with adjusting the frequency of wafer-to-wafer measurements.
机译:提供用于与要测量的晶片(或其他设备)有关的动态调整采样计划的系统,方法和介质。当发生一个或多个事件,这些事件可能指示影响制造过程或结果的内部或外部变化时,本发明根据需要调整测量的频率和/或空间分辨率。动态计量计划通过响应于某些事件表明可能需要对晶片进行额外或不同的测量,通过从采样计划中添加,减去或替换候选点来调整晶片内采样的空间分辨率。此外,本发明可以与调整晶片间测量的频率结合使用。

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