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Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing

机译:用于半导体加工中高级过程控制的动态计量方案和采样方案

摘要

Systems, methods and mediums are provided for dynamic adjustment of sampling plans in connection with a wafer (or other device) to be measured. A sampling plan provides information on specific measure points within a die, a die being the section on the wafer that will eventually become a single chip after processing. There are specified points within the die that are candidates for measuring. The stored die map information may be retrieved and translated to determine the available points for measurement on the wafer.;The invention adjusts the frequency and/or spatial resolution of measurements when one or more events occur that are likely to indicate an internal or external change affecting the manufacturing process or results. The increase in measurements and possible corresponding decrease in processing occur on an as-needed basis. The dynamic metrology plan adjusts the spatial resolution of sampling within-wafer by adding, subtracting or replacing candidate points from the sampling plan, in response to certain events which suggest that additional or different measurements of the wafer may be desirable. Where there are provided a number of candidate points in the die map in the area to which points are to be added, subtracted, or replaced, the system can select among the points. Further, the invention may be used in connection with adjusting the frequency of wafer-to-wafer measurements.
机译:提供用于与要测量的晶片(或其他设备)有关的动态调整采样计划的系统,方法和介质。采样计划提供有关管芯内特定测量点的信息,管芯是晶圆上将在处理后最终成为单个芯片的部分。模具中有指定的点可供测量。所存储的管芯图信息可以被检索和转换以确定在晶片上测量的可用点。当发生一个或多个可能指示内部或外部变化的事件时,本发明调整测量的频率和/或空间分辨率。影响生产过程或结果。测量的增加和可能相应减少的处理会根据需要进行。动态计量计划通过响应于某些事件表明可能需要对晶片进行额外或不同的测量,通过从采样计划中添加,减去或替换候选点来调整晶片内采样的空间分辨率。如果在管芯图中在要添加,减去或替换点的区域中提供了多个候选点,则系统可以在这些点中进行选择。此外,本发明可以与调整晶片间测量的频率结合使用。

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