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Nonvolatile memory cells employing a transition metal oxide layers as a data storage material layer and methods of manufacturing the same
Nonvolatile memory cells employing a transition metal oxide layers as a data storage material layer and methods of manufacturing the same
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机译:采用过渡金属氧化物层作为数据存储材料层的非易失性存储单元及其制造方法
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摘要
Non-volatile memory cells employing a transition metal oxide layer as a data storage material layer are provided. The non-volatile memory cells include a lower and upper electrodes overlapped with each other. A transition metal oxide layer pattern is provided between the lower and upper electrodes. The transition metal oxide layer pattern is represented by a chemical formula MxOy. In the chemical formula, the characters “M”, “O”, “x” and “y” indicate transition metal, oxygen, a transitional metal composition and an oxygen composition, respectively. The transition metal oxide layer pattern has excessive transition metal content in comparison to a stabilized transition metal oxide layer pattern. Methods of fabricating the non-volatile memory cells are also provided.
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机译:提供了采用过渡金属氧化物层作为数据存储材料层的非易失性存储单元。非易失性存储单元包括彼此重叠的下电极和上电极。在下部和上部电极之间提供过渡金属氧化物层图案。过渡金属氧化物层图案由化学式M x Sub> O y Sub>表示。在化学式中,字符“ M”,“ O”,“ x”和“ y”分别表示过渡金属,氧,过渡金属组成和氧组成。与稳定的过渡金属氧化物层图案相比,过渡金属氧化物层图案具有过量的过渡金属含量。还提供了制造非易失性存储单元的方法。
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