首页> 外国专利> FORMING METHOD OF AMORPHOUS CARBON FILM, AMORPHOUS CARBON FILM, MULTILAYER RESIST FILM, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND COMPUTER-READABLE STORAGE MEDIUM

FORMING METHOD OF AMORPHOUS CARBON FILM, AMORPHOUS CARBON FILM, MULTILAYER RESIST FILM, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND COMPUTER-READABLE STORAGE MEDIUM

机译:非晶碳膜的形成方法,非晶碳膜,多层电阻膜,半导体装置的制造方法以及计算机可读存储介质

摘要

An amorphous carbon film forming method is performed by using a parallel plate type plasma CVD apparatus in which an upper electrode and a lower electrode are installed within a processing chamber, and the method includes: disposing a substrate on the lower electrode; supplying carbon monoxide and an inert gas into the processing chamber; decomposing the carbon monoxide by applying a high frequency power to at least the upper electrode and generating plasma; and depositing amorphous carbon on the substrate. It is desirable that the upper electrode is a carbon electrode.
机译:通过使用平行板型等离子体CVD装置执行非晶碳膜形成方法,其中在处理室内安装上部电极和下部电极,该方法包括:在下部电极上布置基板;以及在下部电极上布置基板。将一氧化碳和惰性气体供应到处理室中;通过向至少上电极施加高频功率来分解一氧化碳并产生等离子体;并在基板上沉积无定形碳。期望上电极是碳电极。

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