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N2 BASED PLASMA TREATMENT AND ASH FOR HK METAL GATE PROTECTION
N2 BASED PLASMA TREATMENT AND ASH FOR HK METAL GATE PROTECTION
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机译:基于N2的等离子体处理和灰分用于香港金属门的保护
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摘要
The present disclosure provides a method for making a semiconductor device. The method includes forming a first material layer on substrate; forming a patterned photoresist layer on the first material layer; applying an etching process to the first material layer using the patterned photoresist layer as a mask; and applying a nitrogen-containing plasma to the substrate to remove the patterned photoresist layer.
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