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APPARATUS FOR ANALYZING AND DESIGNING SEMICONDUCTOR DEVICE, AND METHOD FOR ANALYZING AND DESIGNING SEMICONDUCTOR DEVICE

机译：用于分析和设计半导体器件的装置以及用于分析和设计半导体器件的方法

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摘要

PPROBLEM TO BE SOLVED: To analyze and design a precise semiconductor device more precisely. PSOLUTION: The apparatus for analyzing and designing semiconductor device includes a storage unit 2 which relates and stores constitution information of a transistor and measured values of electric characteristics, a parameter setting unit 11 which divides a channel region of the first transistor into a plurality of regions and sets impurity densities of the respective regions as parameters, an element characteristic calculation unit 12 which calculates effective impurity densities obtained by decreasing impurity densities in both end regions of the channel region on the basis of the parameters and determines first calculated values of electric characteristics of the first transistor from a surface potential calculated by a Poisson equation using the effective impurity densities, and a determination unit 13 which stores the parameters as parameters of the first transistor in the storage unit 2 associatively with the constitution information when the measured values read out of the storage unit 2 coincide with the first calculated values. The density distribution setting unit 11 and element characteristic calculation unit 12 continue the execution of the operations until the first calculated values and measured values coincide with each other. PCOPYRIGHT: (C)2010,JPO&INPIT

机译：

要解决的问题：更精确地分析和设计精密的半导体器件。

解决方案：用于分析和设计半导体器件的设备包括：存储单元2，其与晶体管的组成信息和电特性的测量值相关并存储;参数设置单元11，其将第一晶体管的沟道区域划分为：元件特性计算单元12将多个区域的每个区域的杂质浓度作为参数进行设定，并根据该参数来计算通过降低沟道区域的两端区域的杂质浓度而得到的有效杂质浓度，并求出第一计算值。根据通过使用有效杂质密度的泊松方程计算出的表面电势，第一晶体管的电特性，以及确定单元13，确定单元13将作为第一晶体管的参数的参数与构成信息相关联地存储在存储单元2中，当测量值从圣读计量单元2与第一计算值一致。密度分布设置单元11和元素特征计算单元12继续执行操作，直到第一计算值和测量值彼此一致为止。

版权：（C）2010，日本特许厅＆INPIT 展开▼

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公开/公告号JP2010003770A

专利类型
公开/公告日2010-01-07

原文格式PDF
申请/专利权人 NEC ELECTRONICS CORP;
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申请/专利号JP20080159702
发明设计人 SAKAMOTO HIRONORI;
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申请日2008-06-18
分类号H01L21/336;H01L29/78;H01L29;G06F17/50;
国家 JP
入库时间 2022-08-21 18:59:12

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