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ALGAE OUTGROWTH INHIBITOR AND ALGAE OUTGROWTH SUPPRESSING TREATING METHOD ON SURFACE OF GOODS

机译：在商品表面上的藻类生长抑制剂和藻类生长抑制方法

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摘要

PPROBLEM TO BE SOLVED: To provide an algae outgrowth inhibitor and an algae outgrowth suppressing method in which maintenance is easy or unnecessary and versatility is high, and which is cheap. PSOLUTION: The algae outgrowth inhibitor controls outgrowth of algae on a surface of goods, comprises making (a) a silicon-containing compound expressed by general formula (1), wherein RSP1/SPrepresents a hydrocarbon having a carbon number of 6 or more, RSP2/SPand RSP3/SPshow a lower hydrocarbon group which may be the same or different, RSP4/SPshows a bivalent lower hydrocarbon group, RSP5/SP, RSP6/SPand RSP7/SPshow a lower alkyl group or a lower alkoxy group which may be same or different, X shows a halogen ion or an organic carbonyloxy ion, uniformly disperse in water by (b) at least one surfactant chosen from a group consisting of a cationic surfactant (however, excluding the silicon compound) (b1), a nonionic surfactant (b2), and an ampholytic surfactant (b3). PCOPYRIGHT: (C)2010,JPO&INPIT

机译：

要解决的问题：提供一种藻类抑制抑制剂和藻类抑制抑制方法，该方法易于维护或不需要维护并且通用性高且廉价。

解决方案：藻类增生抑制剂控制藻类在商品表面上的增生，包括制备（a）通式（1）表示的含硅化合物，其中R 1 表示烃碳原子数为6或更大的R 2 和R 3 显示一个低级烃基，该烃基可以相同或不同，R 4 表示一个二价的低级烃基，R 5 ，R 6 和R 7 表示一个低级烷基或一个低级烷氧基，它们可以相同或不同，X表示卤素离子或有机羰氧基离子，通过（b）至少一种选自阳离子表面活性剂（但是，不包括硅化合物）（b1），非离子表面活性剂的表面活性剂均匀地分散在水中（b2）和两性表面活性剂（b3）。

版权：（C）2010，日本特许厅＆INPIT 展开▼

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公开/公告号JP2010083830A

专利类型
公开/公告日2010-04-15

原文格式PDF
申请/专利权人 HIROSHIMA UNIV;CHUGOKU TEKKAN TSUGITE KK;
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申请/专利号JP20080256236
发明设计人 NIKAWA HIROKI;TAKADA YUJI;
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申请日2008-10-01
分类号A01N55;A01N25/30;A01P13;
国家 JP
入库时间 2022-08-21 19:03:46

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