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DEPTH CALIBRATION SAMPLE FOR SECONDARY ION MASS SPECTROMETRY, PRODUCTION METHOD OF THE SAME AND SECONDARY ION MASS SPECTROMETRY

机译:二次离子质谱的深度校准样品,相同和二次离子质谱的生产方法

摘要

PROBLEM TO BE SOLVED: To provide a standard sample for depth calibration of secondary ion mass spectrometry which has an impurity concentration distribution in a shallow region like a transition region.;SOLUTION: The standard sample is produced by steps of: forming an ion implantation layer 2 by ion-implanting In or Ga to a silicon substrate 1; and forming a redistribution layer 4 by accumulating ion-implanted In or Ga in a neighborhood of the surface of the silicon substrate 1 by irradiating the silicon substrate 1 with an oxygen ion 3. A standard sample having a known In or Ga concentration distribution is prepared according to the irradiation angle and irradiation energy of the oxygen ion 3.;COPYRIGHT: (C)2010,JPO&INPIT
机译:解决的问题:提供一种用于二次离子质谱深度校准的标准样品,该样品在诸如过渡区域这样的浅区域中具有杂质浓度分布;解决方案:该标准样品的生产步骤如下:形成离子注入层2通过将In或Ga离子注入到硅衬底1上;通过用氧离子3照射硅衬底1,在硅衬底1的表面附近累积离子注入的In或Ga,形成再分布层4。制备具有已知In或Ga浓度分布的标准样品。根据氧离子的照射角度和照射能量3 .;版权所有:(C)2010,日本特许厅

著录项

  • 公开/公告号JP2010112821A

    专利类型

  • 公开/公告日2010-05-20

    原文格式PDF

  • 申请/专利权人 FUJITSU LTD;

    申请/专利号JP20080285295

  • 发明设计人 KATAOKA YUJI;SHIGENO MAYUMI;

    申请日2008-11-06

  • 分类号G01N27/62;G01N27/64;

  • 国家 JP

  • 入库时间 2022-08-21 19:05:39

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