首页>
外国专利>
Electrochemical etching of macropores in n-type silicon wafers under illumination of backside of the wafer using an aqueous electrolyte, where the electrolyte is an aqueous acetic acid solution of a composition with hydrogen fluoride
Electrochemical etching of macropores in n-type silicon wafers under illumination of backside of the wafer using an aqueous electrolyte, where the electrolyte is an aqueous acetic acid solution of a composition with hydrogen fluoride
Electrochemical etching of macropores in n-type silicon wafers under illumination of wafer's rear side by use of an aqueous electrolyte, is claimed, where the electrolyte is an aqueous acetic acid solution of a composition comprising water:acetic acid in a ratio of 2:1 and 7:3 with a mixture of at least 9 wt.% of hydrogen fluoride.
展开▼