• 主题
高级搜索  >
历史搜索 清空历史
首页> 外国专利> METHOD FOR GROWING OF HOLLOW CYLINDRICAL SINGLE CRYSTALS OF SILICON BASED ON CHOKHRALSKY METHOD AND DEVICE FOR ITS REALISATION

METHOD FOR GROWING OF HOLLOW CYLINDRICAL SINGLE CRYSTALS OF SILICON BASED ON CHOKHRALSKY METHOD AND DEVICE FOR ITS REALISATION

机译：霍夫斯基方法的硅空心圆柱形单晶生长方法及其实现的装置

页面导航
  • 摘要
  • 著录项
  • 相似文献

摘要

FIELD: technological processes.;SUBSTANCE: invention is related to the field of electronic engineering, in particular to technology for growth of profiled single-crystals of silicon in the form of hollow thin-walled cylinders to make epitaxial cylindrical (non-planar) structures of strong power semiconductor instruments. Method consists in the fact that vacuum chamber is sealed and vacuumised with thermal unit and hollow cylindrical seeding agent of silicon single crystal located in it, inertial gas with dew point of at least -70°C is supplied in it during the whole process of hollow cylindrical single crystals growth, heater is used to heat the thermal unit equipped with quartz melting crucible filled with silicon, afterwards quartz melting crucible is vertically displaced until its bottom is located in zone of thermal unit maximum temperature, and silicon fill is melted, then lower end of hollow cylindrical seeding agent of silicon single crystal is melted by means of its submersion into silicon melt located in quartz melting crucible, afterwards quartz melting crucible and hollow cylindrical seeding agent of silicon single crystal in contact with silicon melt are rotated in the same direction and with the same rotation frequency, at that rotary hollow cylindrical seeding agent of silicon single crystal is lifted up with speed that provides for growth of hollow cylindrical single crystal of silicon on its lower end, to complete expenditure of silicon melt in quartz melting crucible, at that in process of growing the following conditions are fulfilled: qint.=qext., where qint. is specific thermal flow directed to internal surface of hollow cylindrical silicon single crystal in process of its growth in crystallisation plane, W/m2, qext. is specific thermal flow directed at external side surface of hollow cylindrical single crystal of silicon in process of its growth in crystallisation plane, W/m2, and convective flows of silicon melt are directed from center of quartz melting crucible bottom vertically upwards along axis of hollow cylindrical seeding agent of silicon single crystal. Design of device for growth of hollow cylindrical silicon single crystals is described.;EFFECT: formation of section of profile hollow cylindrical silicon single crystals with uniform distribution of their electrophysical and structural parametres: diametre of 20-50 mm with continuous thickness of wall of 3-5 mm and low density of dislocation in structure - not more than 103-104 cm-2, specific electric resistance of 0.02 Ohm·cm with dispersion of not more than 6%, life time of unbalanced charge carrier of not more than 1 mcs.;4 cl, 1 dwg
机译：技术领域本发明涉及电子工程领域，尤其涉及用于生长空心薄壁圆柱体形式的硅异型单晶以制造外延圆柱（非平面）结构的技术强功率半导体仪器。该方法的特征在于，在真空室中用热单元和位于其中的单晶硅空心圆柱形晶种剂进行密封和真空处理，在整个空心过程中向其中供应露点至少为-70°C的惰性气体。圆柱形单晶生长，用加热器加热装有装有硅的石英熔化坩埚的加热单元，然后垂直移动石英熔化坩埚，直到其底部位于加热单元的最高温度区域，然后将硅填充物熔化，然后降低将单晶硅空心空心晶种剂的一端浸入位于石英熔体坩埚中的硅熔体中，然后将石英熔体坩埚和与硅熔体接触的单晶空心空心晶种剂沿相同方向旋转并且在相同的旋转频率下，硅单晶的旋转空心圆柱状晶种剂tal以一定速度提起，以便在其下端生长中空的圆柱形单晶硅，以完全完成在石英熔炼坩埚中硅熔体的消耗，并满足以下条件：q int 。 = q ext。，其中q int。是在中空圆柱硅单晶在结晶平面内生长过程中定向到中空圆柱硅单晶内表面的比热流。 ，W / m 2 ，q ext。 是在中空圆柱形单晶硅在结晶平面中生长过程中指向硅空心圆柱形单晶外侧表面的比热流，W / m 2 ，而硅熔体的对流从石英熔炼坩埚底部的中心沿单晶硅空心圆柱状晶种剂的轴垂直向上。描述了用于中空圆柱形硅单晶生长的装置的设计;效果：形成剖面的中空圆柱形硅单晶的截面，其电物理和结构参数均匀分布：直径为20-50 mm，壁的连续厚度为3 -5 mm，结构中的位错密度低-不超过10 3 -10 4 cm -2 ，电阻率0.02欧姆·cm，分散度不超过6％，不平衡载流子的寿命不超过1 mcs; 4 cl，1 dwg

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号