SILICON-BASED NANOWIRE HAVING LOW CONTACT RESISTANCE AND METHOD FOR MANUFACTURING THE SAME

• 1. 一种具有低接触电阻的金属纳米线涂层/聚合物复合材料的制备方法 [P] . 中国专利： CN112608506A . 2021-04-06
• 2. 具有硅锗低接触电阻的PIN二极管及其形成方法 [P] . 中国专利： CN102640289A . 2012-08-15
• 3. METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE WITH A LOW CONTACT RESISTANCE, CAPABLE OF REDUCING A CONTACT RESISTANCE [P] . 韩国专利： KR20100038679A . 2010-04-15

  机译： 制造具有低接触电阻，能够降低接触电阻的半导体装置的方法

• 4. METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE WITH LOW CONTACT RESISTANCE, CAPABLE OF REDUCING CONTACT RESISTANCE WITHOUT INCREASING PROCESSES [P] . 韩国专利： KR20100127112A . 2010-12-03

  机译： 制造低接触电阻，能够在不增加工艺的情况下降低接触电阻的半导体器件的制造方法

• 5. LOW CONTACT RESISTANCE AND LOW JUNCTION LEAKAGE METAL INTERCONNECT CONTACT STRUCTURE AND METHOD FOR ITS MANUFACTURE [P] . 韩国专利： KR100315963B1 . 2001-12-20

  机译： 低接触电阻和低结泄漏金属互连的接触结构及其制造方法

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