首页> 外国专利> Large area electron emission system for application in mask-based lithography, maskless lithography II and microscopy

Large area electron emission system for application in mask-based lithography, maskless lithography II and microscopy

机译:大面积电子发射系统,用于基于掩模的光刻,无掩模光刻II和显微镜

摘要

The present invention relates to a various systems for generating and directing electron flow, and related methods, manufacturing techniques and related componentry, such as can be used in lithography, microscopy and other applications. In one embodiment, the present invention involves a system that includes an electron source having a plurality of independently-actuatable emission surfaces each of which is capable of emitting electrons, and an optical column adjacent to the electron source through which the emitted electrons pass. The optical column includes a plurality of actuatable electrodes that are capable of influencing paths taken by the emitted electrons.
机译:本发明涉及用于产生和引导电子流的各种系统,以及相关的方法,制造技术和相关的部件,例如可以用在光刻,显微术和其他应用中的。在一个实施例中,本发明涉及一种系统,该系统包括:具有多个可独立致动的发射表面的电子源,每个发射表面能够发射电子;以及与该电子源相邻的光学柱,发射的电子穿过该光学柱。光学柱包括多个可致动电极,其能够影响所发射的电子所采取的路径。

著录项

  • 公开/公告号US7456491B2

    专利类型

  • 公开/公告日2008-11-25

    原文格式PDF

  • 申请/专利权人 SUBRAHMANYAM V. S. PILLA;

    申请/专利号US20050188043

  • 发明设计人 SUBRAHMANYAM V. S. PILLA;

    申请日2005-07-22

  • 分类号H01L33/00;

  • 国家 US

  • 入库时间 2022-08-21 19:29:12

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