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Method of fabricating a metal oxynitride thin film that includes a first annealing of a metal oxide film in a nitrogen-containing atmosphere to form a metal oxynitride film and a second annealing of the metal oxynitride film in an oxidizing atmosphere
Method of fabricating a metal oxynitride thin film that includes a first annealing of a metal oxide film in a nitrogen-containing atmosphere to form a metal oxynitride film and a second annealing of the metal oxynitride film in an oxidizing atmosphere
After the surface of the substrate is cleaned, an interface layer or an antidiffusion film is formed. A metal oxide film is built upon the antidiffusion film Annealing is done in an NH3 atmosphere so as to diffuse nitrogen in the metal oxide film. Building of the metal oxide film and diffusion of nitrogen are repeated several times, whereupon annealing is done in an O2 atmosphere. By annealing the film in an O2 atmosphere at a temperature higher than 650° C., the leak current in the metal oxide film is controlled.
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