首页> 外国专利> Strain Balanced Multiple Quantum Well Subcell In Inverted Metamorphic Multijunction Solar Cell

Strain Balanced Multiple Quantum Well Subcell In Inverted Metamorphic Multijunction Solar Cell

机译:反向变质多结太阳能电池中的应变平衡多量子阱子电池

摘要

A method of manufacturing a solar cell by providing a first semiconductor substrate for the epitaxial growth of semiconductor material; forming a first subcell on the substrate with a first semiconductor material with a first band gap and a first lattice constant; forming a second subcell with a second semiconductor material with a second band gap and a second lattice constant, wherein the second band gap is less than the first band gap and the second lattice constant is greater than the first lattice constant; the second subcell including a strain balanced quantum well structure; and forming a lattice constant transition material positioned between the first subcell and the second subcell, the lattice constant transition material having a lattice constant that changes gradually from the first lattice constant to the second lattice constant.
机译:一种通过提供用于半导体材料的外延生长的第一半导体衬底来制造太阳能电池的方法;用具有第一带隙和第一晶格常数的第一半导体材料在衬底上形成第一子电池;用具有第二带隙和第二晶格常数的第二半导体材料形成第二子电池,其中,第二带隙小于第一带隙,第二晶格常数大于第一晶格常数;第二子电池包括应变平衡量子阱结构;形成位于第一子电池和第二子电池之间的晶格常数过渡材料,该晶格常数过渡材料具有从第一晶格常数到第二晶格常数逐渐变化的晶格常数。

著录项

  • 公开/公告号US2009272438A1

    专利类型

  • 公开/公告日2009-11-05

    原文格式PDF

  • 申请/专利权人 ARTHUR CORNFELD;

    申请/专利号US20080253051

  • 发明设计人 ARTHUR CORNFELD;

    申请日2008-10-16

  • 分类号H01L31/0304;H01L31/18;

  • 国家 US

  • 入库时间 2022-08-21 19:34:16

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号