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DESIGN STRUCTURE FOR ALPHA PARTICLE SENSOR IN SOI TECHNOLOGY AND STRUCTURE THEREOF
DESIGN STRUCTURE FOR ALPHA PARTICLE SENSOR IN SOI TECHNOLOGY AND STRUCTURE THEREOF
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机译：SOI技术中Alpha粒子传感器的设计结构及其结构
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摘要
The invention relates to a design structure, and more particularly, to a design structure for an alpha particle sensor in SOI technology and a circuit thereof. The structure is a silicon-on-insulator radiation detector which includes: a charge collection node; a precharge transistor that has a source from the charge collection node, a drain at Vdd, and a gate controlled by a precharge signal; an access transistor that has a source from the charge collection node, a drain connecting to a readout node, and a gate controlled by a read-out signal; and a detector pulldown transistor having a drain from the charge collection node, a source to ground, and a grounded gate.
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