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It possesses negative differential resistance, nano- structure of 0, 1, 2, and 3 dimensions and method in order to make this
It possesses negative differential resistance, nano- structure of 0, 1, 2, and 3 dimensions and method in order to make this
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机译：它具有负微分电阻，0、1、2和3尺寸的纳米结构和方法，以使其成为现实。
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摘要
It is method in order this invention has negative differential resistance, to make the nano- structure, and these nano- structures of 0, 1, 2, and 3 dimensions. The nano- structure which is due to this invention is used especially in the field of nano- electronics. As for this nano- structure, the silicon carbide baseplate (30), at least one structure on the surface (32), or description above at least being at least one plural of one structure, the above-mentioned structure, it seems that from the quantum connected pad and the atomic segment and the atomic line and the aggregate is selected, at least one structure (32), or description above at least at least one plural of one structure and, at least one metal accumulation (34) being, this metal accumulation, description above at least one structure, or description above at least description above of one structure at least one plural, orAt least, two these structure of combination of structure of 0, 1, 2 or 3 dimensions is covered, one metal accumulation (34) with it includes at least.
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