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The ultralow dielectricity factor which possesses the reliability which is improved (k) structure and the mannered null post-treatment which integrate
The ultralow dielectricity factor which possesses the reliability which is improved (k) structure and the mannered null post-treatment which integrate
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机译：超低介电系数，具有改善的可靠性（k）结构和整合后的零陷后处理
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摘要
PROBLEM TO BE SOLVED: To provide an improved BEOL interconnection structure that has a ULK (ultra-low k) dielectric.;SOLUTION: This structure can be of a single or dual damascene type provided with high-density TDL (thin dielectric layer) between a metal barrier layer and the ULK dielectric. Further, a method of manufacturing a BEOL interconnection structure includes (i) a method of forming a high-density TDL in an opening of the ULK dielectric bored by etching, and (ii) a method of arranging the ULK dielectric in a process chamber on a cold chuck, putting a seal agent into the process chamber and further performing an activating step.;COPYRIGHT: (C)2005,JPO&NCIPI
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