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Apparatus and method for producing polycrystalline or multicrystalline silicon, ingot produced thereby and wafers of polycrystalline or multicrystalline silicon, and use for the production of solar cells
Apparatus and method for producing polycrystalline or multicrystalline silicon, ingot produced thereby and wafers of polycrystalline or multicrystalline silicon, and use for the production of solar cells
A method and an apparatus are described for producing polycrystalline or multicrystalline silicon, wherein a melt of a silicon starting material is formed and the silicon melt is subsequently directionally solidified. A phase or material is provided in gaseous, liquid or solid form over the melt so that oxygen, carbon and / or nitrogen partial pressure is settable over the silicon melt in the crucible or by a concentration of oxygen and / or Carbon in the silicon melt and thus in the solidified poly or multicrystalline silicon is controllable. In this way, the formation of compound precipitates, in particular of the electrical properties of solar cells impairing silicon carbide, effectively limit and prevent.
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