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Method for manufacturing semiconductor component, involves preparing semiconductor substrate with active area and boundary area, which is adjacent to active area, where active area has conducting material having trenches
Method for manufacturing semiconductor component, involves preparing semiconductor substrate with active area and boundary area, which is adjacent to active area, where active area has conducting material having trenches
The method involves preparing a semiconductor substrate (18) with an active area (10) and a boundary area (11), which is adjacent to the active area. The active area has a conducting material (16), which has trenches (15) in the semiconductor substrate. The conducting material is insulated from the semiconductor substrate in the trenches by an insulating layer (17). A spacer layer (12) is formed over the semiconductor substrate, which has a varying thickness (d-2,d-1') in the boundary area. An independent claim is also included for a semiconductor component.
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